@inproceedings{IzsakKovačovaVankoetal.2022, author = {Tibor Izs{\´a}k and Eva Kov{\´a}čov{\´a} and Gabriel Vanko and Š. Hašč{\´i}k and Johann Zehetner and Marian Vojs and B. Zaťko}, title = {Optimization of mask material for deep ractive ion etching of GaAs structures}, series = {Proceeding of the International Conference on Advances in Electronic and Photonic Technologies (ADEPT 2022): Tatransk{\´a} Lomnica, Slovakia, June 20th-24th, 2022.}, publisher = {EDIS-Publishing Centre of UZ}, address = {Žilina}, isbn = {978-80-554-1884-1}, pages = {169 -- 172}, year = {2022}, abstract = {Deep etched structures in GaAs with high aspect ratio have promising applications in optoelectronics and MEMS devices. The key factors in their fabrication process are the choosing of proper mask material and etching conditions which results in high selectivity and an anisotropic etch profile with smooth sidewalls. In this work, we studied several types of mask materials (Al, Ni, Cr, SiO2) for deep reactive ion etching of GaAs using inductively coupled plasma system. Thus, several sets of experiments were performed with varying gas mixture, pressure and ICP/RF power. As a result, we find optimized conditions and minimal thickness of mask material for achieving deep etched (>140 m) GaAs structures.}, language = {en} }