TY  - CHAP
U1  - Konferenzveröffentlichung
A1  - Izsák, Tibor
A1  - Kováčová, Eva
A1  - Vanko, Gabriel
A1  - Haščík, Š.
A1  - Zehetner, Johann
A1  - Vojs, Marian
A1  - Zaťko, B.
T1  - Optimization of mask material for deep ractive ion etching of GaAs structures
T2  - Proceeding of the International Conference on Advances in Electronic and Photonic Technologies (ADEPT 2022): Tatranská Lomnica, Slovakia, June 20th-24th, 2022.
N2  - Deep etched structures in GaAs with high aspect ratio have promising applications in optoelectronics and MEMS devices. The key factors in their fabrication process are the choosing of proper mask material and etching conditions which results in high selectivity and an anisotropic etch profile with smooth sidewalls. In this work, we studied several types of mask materials (Al, Ni, Cr, SiO2) for deep reactive ion etching of GaAs using inductively coupled plasma system. Thus, several sets of experiments were performed with varying gas mixture, pressure and ICP/RF power. As a result, we find optimized conditions and minimal thickness of mask material for achieving deep etched (>140 m) GaAs structures.
KW  - ICP
KW  - GaAs
KW  - SiO2
KW  - deep reactive ion etching
Y1  - 2022
SN  - 978-80-554-1884-1
SB  - 978-80-554-1884-1
SP  - 169
EP  - 172
S1  - 4
PB  - EDIS-Publishing Centre of UZ
CY  - Žilina
ER  -