TY - CHAP U1 - Konferenzveröffentlichung A1 - Zehetner, Johann A1 - Vanko, Gabriel A1 - Choleva, Pavlina A1 - Dzuba, Jaroslav A1 - Ryger, Ivan A1 - Lalinsky, Tibor ED - Breza, Juraj ED - Donoval, Daniel ED - Vavrinsky, Erik T1 - Using of laser ablation technique in the processing technology of GaN/SiC based MEMS for extreme conditions T2 - ASDAM 2014. Conference proceedings. The tenth International Conference on Advanced Semiconductor Devices and Microsystems. Smolenice Castle, Slovakia. 20-22 October 2014 KW - Laser ablation KW - AlGaN-GaN KW - aluminium compounds KW - Aluminum gallium nitride KW - backside damaging KW - epitaxial heterostructures KW - femtosecond laser ablation technique KW - gallium compounds KW - Gallium nitride KW - GaN-SiC KW - HEMT KW - high electron mobility transistors KW - III-V semiconductors KW - MEMS sensors KW - microelectromechanical systems KW - micromechanic structures fabrication KW - Micromechanical devices KW - microsensors KW - Schottky diodes KW - Sensors KW - SiC substrates KW - Silicon carbide KW - silicon compounds KW - Substrates KW - wide band gap semiconductors Y1 - 2014 SP - 4 S1 - 4 PB - IEEE CY - Piscataway, NJ ER -