TY  - CHAP
U1  - Konferenzveröffentlichung
A1  - Matay, Ladislav
A1  - Andok, Robert
A1  - Barák, V.
A1  - Ritomský, A.
A1  - Konečnikova, I.
A1  - Kostič, Ivan
A1  - Partel, Stefan
A1  - Hudek, Peter
ED  - Breza, Juraj
T1  - Material optimization of the alignment marks for the EBDW lithography
T2  - 8th International Conference on Advanced Semiconductor Devices Microsystems (ASDAM), 2010. 25 - 27 Oct. 2010, Smolenice Castle, Slovakia
KW  - alignment marks
KW  - deep reactive ion etching
KW  - e-beam lithography
KW  - EBDW lithography
KW  - electron beam lithography
KW  - electron-beam direct-write
KW  - Gold
KW  - Lithography
KW  - material optimization
KW  - Nickel
KW  - optimisation
KW  - photolithography
KW  - Resists
KW  - Silicon
KW  - sputter etching
KW  - Surfaces
Y1  - 2010
U6  - https://doi.org/10.1109/ASDAM.2010.5666341
DO  - https://doi.org/10.1109/ASDAM.2010.5666341
SP  - 85
EP  - 88
PB  - IEEE Operations Center
CY  - Piscataway, NJ
ER  -