TY  - CHAP
A1  - Zehetner, Johann
A1  - Vanko, Gabriel
A1  - Choleva, Pavlina
A1  - Dzuba, Jaroslav
A1  - Ryger, Ivan
A1  - Lalinsky, Tibor
ED  - Breza, Juraj
ED  - Donoval, Daniel
ED  - Vavrinsky, Erik
T1  - Using of laser ablation technique in the processing technology of GaN/SiC based MEMS for extreme conditions
T2  - ASDAM 2014. Conference proceedings. The tenth International Conference on Advanced Semiconductor Devices and Microsystems. Smolenice Castle, Slovakia. 20-22 October 2014
KW  - Laser ablation
KW  - AlGaN-GaN
KW  - aluminium compounds
KW  - Aluminum gallium nitride
KW  - backside damaging
KW  - epitaxial heterostructures
KW  - femtosecond laser ablation technique
KW  - gallium compounds
KW  - Gallium nitride
KW  - GaN-SiC
KW  - HEMT
KW  - high electron mobility transistors
KW  - III-V semiconductors
KW  - MEMS sensors
KW  - microelectromechanical systems
KW  - micromechanic structures fabrication
KW  - Micromechanical devices
KW  - microsensors
KW  - Schottky diodes
KW  - Sensors
KW  - SiC substrates
KW  - Silicon carbide
KW  - silicon compounds
KW  - Substrates
KW  - wide band gap semiconductors
Y1  - 2014
PB  - IEEE
CY  - Piscataway, NJ
ER  - 
TY  - JOUR
A1  - Vanko, Gabriel
A1  - Hudek, Peter
A1  - Zehetner, Johann
A1  - Dzuba, Jaroslav
A1  - Choleva, Pavlina
A1  - Kutis, Vladimir
A1  - Vallo, Martin
A1  - Ryger, Ivan
A1  - Lalinsky, Tibor
T1  - Bulk micromachining of SiC substrate for MEMS sensor applications
JF  - Microelectronic Engineering
KW  - Laser ablation
KW  - AlGaN/GaN HEMT
KW  - Bulk micromachining
KW  - SiC MEMS
Y1  - 2013
U6  - http://dx.doi.org/10.1016/j.mee.2013.01.046
SN  - 0167-9317
VL  - o. Jg.
IS  - Bd. 110
SP  - 260
EP  - 264
ER  -