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Optimization of mask material for deep ractive ion etching of GaAs structures

  • Deep etched structures in GaAs with high aspect ratio have promising applications in optoelectronics and MEMS devices. The key factors in their fabrication process are the choosing of proper mask material and etching conditions which results in high selectivity and an anisotropic etch profile with smooth sidewalls. In this work, we studied several types of mask materials (Al, Ni, Cr, SiO2) for deep reactive ion etching of GaAs using inductively coupled plasma system. Thus, several sets of experiments were performed with varying gas mixture, pressure and ICP/RF power. As a result, we find optimized conditions and minimal thickness of mask material for achieving deep etched (>140 m) GaAs structures.

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Author:Tibor Izsák, Eva Kováčová, Gabriel Vanko, Š. Haščík, Johann ZehetnerORCiD, Marian Vojs, B. Zaťko
Parent Title (English):Proceeding of the International Conference on Advances in Electronic and Photonic Technologies (ADEPT 2022): Tatranská Lomnica, Slovakia, June 20th-24th, 2022.
Publisher:EDIS-Publishing Centre of UZ
Place of publication:Žilina
Document Type:Conference Proceeding
Year of publication:2022
Release Date:2023/03/03
Tag:GaAs; ICP; SiO2; deep reactive ion etching
Number of pages:4
First Page:169
Last Page:172
Organisationseinheit:Forschung / Forschungszentrum Mikrotechnik
DDC classes:600 Technik, Medizin, angewandte Wissenschaften
Publicationlist:Zehetner, Johann