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Material optimization of the alignment marks for the EBDW lithography

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Author:Ladislav Matay, Robert Andok, V. Barák, A. Ritomský, I. Konečnikova, Ivan Kostič, Stefan Partel, Peter Hudek
DOI:https://doi.org/10.1109/ASDAM.2010.5666341
Parent Title (English):8th International Conference on Advanced Semiconductor Devices Microsystems (ASDAM), 2010. 25 - 27 Oct. 2010, Smolenice Castle, Slovakia
Publisher:IEEE Operations Center
Place of publication:Piscataway, NJ
Editor:Juraj Breza
Document Type:Conference Proceeding
Language:English
Year of publication:2010
Release Date:2018/11/22
Tag:EBDW lithography; Gold; Lithography; Nickel; Resists; Silicon; Surfaces; alignment marks; deep reactive ion etching; e-beam lithography; electron beam lithography; electron-beam direct-write; material optimization; optimisation; photolithography; sputter etching
First Page:85
Last Page:88
Organisationseinheit:Forschung / Forschungszentrum Mikrotechnik
Publicationlist:Partel, Stefan