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Using of laser ablation technique in the processing technology of GaN/SiC based MEMS for extreme conditions
Author: | Johann ZehetnerORCiD, Gabriel Vanko, Pavlina Choleva, Jaroslav Dzuba, Ivan Ryger, Tibor Lalinsky |
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Parent Title (English): | ASDAM 2014. Conference proceedings. The tenth International Conference on Advanced Semiconductor Devices and Microsystems. Smolenice Castle, Slovakia. 20-22 October 2014 |
Publisher: | IEEE |
Place of publication: | Piscataway, NJ |
Editor: | Juraj Breza, Daniel Donoval, Erik Vavrinsky |
Document Type: | Conference Proceeding |
Language: | English |
Year of publication: | 2014 |
Release Date: | 2018/11/22 |
Tag: | AlGaN-GaN; Aluminum gallium nitride; GaN-SiC; Gallium nitride; HEMT; III-V semiconductors; Laser ablation; MEMS sensors; Micromechanical devices; Schottky diodes; Sensors; SiC substrates; Silicon carbide; Substrates; aluminium compounds; backside damaging; epitaxial heterostructures; femtosecond laser ablation technique; gallium compounds; high electron mobility transistors; microelectromechanical systems; micromechanic structures fabrication; microsensors; silicon compounds; wide band gap semiconductors |
Number of pages: | 4 |
Organisationseinheit: | Forschung / Forschungszentrum Mikrotechnik |
Forschung / Josef Ressel Zentrum für Materialbearbeitung | |
Publicationlist: | Zehetner, Johann |