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Synthesis of doped polycrystalline silicon carbide films for light-emitting diodes

  • Graphite substrates underwent two methods of creating doped silicon carbide films via carbothermal reduction; the first method being liquid-phase processing, or dip-coating, and the second gas-phase processing, otherwise referred to as the solid-vapour reaction. The dip-coating procedure resulted in flaky coatings, while the solid-vapour reaction resulted in polycrystalline films with columnar growth that displayed promising morphological and electrical properties. The films were tested on their performance as semiconductor diodes, and proved that carbothermal reduction in the gas phase is a promising technique for creating polycrystalline silicon carbide films for the application of light-emitting diodes.

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Metadaten
Author:Beatrice Atzl
DOI:https://doi.org/10.25924/opus-3652
Advisor:Bettina Friedel
Document Type:Master's Thesis
Language:English
Year of publication:2020
Publishing Institution:FH Vorarlberg (Fachhochschule Vorarlberg)
Granting Institution:FH Vorarlberg (Fachhochschule Vorarlberg)
Release Date:2020/12/21
Tag:Carbothermal reduction; Light emitting diodes; Polycrystalline; Silicon carbide
Number og pages:xi, 62, VI
DDC classes:600 Technik, Medizin, angewandte Wissenschaften
Open Access?:ja
Course of Studies:Energietechnik und Energiewirtschaft
Licence (German):License LogoUrhG - The Austrian Copyright Act applies - Es gilt das österr. Urheberrechtsgesetz