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Experimental multi-state quantum discrimination in the frequency domain with quantum dot light
(2022)
The quest for the realization of effective quantum state discrimination strategies is of great interest for quantum information technology, as well as for fundamental studies. Therefore, it is crucial to develop new and more efficient methods to implement discrimination protocols for quantum states. Among the others, single photon implementations are more advisable, because of their inherent security advantage in quantum communication scenarios. In this work, we present the experimental realization of a protocol employing a time-multiplexing strategy to optimally discriminate among eight non-orthogonal states, encoded in the four-dimensional Hilbert space spanning both the polarization degree of freedom and photon energy. The experiment, built on a custom-designed bulk optics analyser setup and single photons generated by a nearly deterministic solid-state source, represents a benchmarking example of minimum error discrimination with actual quantum states, requiring only linear optics and two photodetectors to be realized. Our work paves the way for more complex applications and delivers a novel approach towards high-dimensional quantum encoding and decoding operations.
A quantum-light source that delivers photons with a high brightness and a high degree of entanglement is fundamental for the development of efficient entanglement-based quantum-key distribution systems. Among all possible candidates, epitaxial quantum dots are currently emerging as one of the brightest sources of highly entangled photons. However, the optimization of both brightness and entanglement currently requires different technologies that are difficult to combine in a scalable manner. In this work, we overcome this challenge by developing a novel device consisting of a quantum dot embedded in a circular Bragg resonator, in turn, integrated onto a micromachined piezoelectric actuator. The resonator engineers the light-matter interaction to empower extraction efficiencies up to 0.69(4). Simultaneously, the actuator manipulates strain fields that tune the quantum dot for the generation of entangled photons with fidelities up to 0.96(1). This hybrid technology has the potential to overcome the limitations of the key rates that plague current approaches to entanglement-based quantum key distribution and entanglement-based quantum networks. Introduction
The paper deals with designing and numerical modelling a 2 x 2 optical switch for photonic integrated circuits based on 2 x 2 MMI elements and phase modulators. The 2 x 2 optical switch was modelled in the RsoftCAD with the simulation tool BeamPROP. The 2 x 2 optical switch is a common element for creating more complex 1 x N or N x N optical switches in all-optical signal processing.
In this paper, the design of three-dimensional configuration of Y-branch splitter is compared with Multimode Interference splitter. Both splitters use the IP-Dip polymer as a standard material for 3D laser lithography. The optical properties of the splitters for both approaches are discussed and compared.
In this work, we investigated the influence of different etch depths of the rib waveguides on the performance of SiN-based AWGs. For this purpose, an 8-channel 100 GHz AWG was designed for a center wavelength of 850 nm. The design parameters entered were calculated using the AWG-Parameters tool. The simulations were performed with a commercial photonic tool PHASAR from Optiwave. The simulated performance was evaluated using the AWG-Analyzer tool. For the AWG design, we used three identical rib waveguides with different etch depths to simulate possible etch imperfection. The simulations show the wavelength shift and degradation of the AWG performance.
Semiconducting metal oxides are widely used for solar cells, poto-catalysis, bio-active materials and gas sensors. Besides the material properties of the used semiconductor,the specific surface topology of the sensor determines the device performance. We investigate the preparation and transfer suitable metals onto LIPPS structures on glass for gas sensing applications.
Deep etched structures in GaAs with high aspect ratio have promising applications in optoelectronics and MEMS devices. The key factors in their fabrication process are the choosing of proper mask material and etching conditions which results in high selectivity and an anisotropic etch profile with smooth sidewalls. In this work, we studied several types of mask materials (Al, Ni, Cr, SiO2) for deep reactive ion etching of GaAs using inductively coupled plasma system. Thus, several sets of experiments were performed with varying gas mixture, pressure and ICP/RF power. As a result, we find optimized conditions and minimal thickness of mask material for achieving deep etched (>140 m) GaAs structures.
Various carbon (nano-) forms, so-called allotropes, have become one of the most supporting activities in fundamental and applied research trends. Therefore, a universal deposition process capable of “adjusting” system parameters in one “deposition chamber” is highly demanding. Here, we present a low-pressure large area deposition system combining radiofrequency (RF) and microwave (MW) plasma in one chamber in different configurations, which offers a wide deposition window for the growth of sp2 carbon (carbon nanotubes, amorphous carbon), a mixture of sp2 and sp3 (diamond-like films) and pure sp3 carbon represented by diamond films. We will show that not only the type of plasma source (RF vs. MW) but also the gas mixture and plasma chemistry are crucial parameters for the controllable and reproducible growth of these allotropes at temperatures from 250 to 800 °C.
The properties of SiC and diamond make them attractive materials for MEMS and sensor devices. We innovated specific laser ablation techniques to fabricate membranes and cantilevers made of SiC or nano-(micro-) crystalline diamond films grown on Si/SiO2 substrates by microwave chemical vapour deposition (MWCVD). We started research to generate surface moulds to grow corrugated diamond films for membranes and cantilevers. A software tool was developed to support the design of micromechanical cantilevers. We can measure deformation and resonant frequency of diamond cantilevers and identify the global mechanical properties. A benchmark against finite element simulations enables an inverse identification of the specific system parameters and simplifies the characterization procedure.
The properties of diamond make it an attractive material for MEMS and sensor devices. We present the feasibility to fabricate membranes and cantilevers made of nano-(micro-) crystalline diamond films grown on Si/SiO2 substrates using microwave chemical vapour deposition (MWCVD). The patterning of micromechanical structures was performed by a combined process of femtosecond laser ablation and wet etching. We designed cantilever structures with varying lengths and widths (25, 50, 100, 200 and 300 μm). The cantilevers were made in a symmetric left- and right-hand configuration. An additional laser treatment was used to modify the mechanical properties of the left-hand cantilever. The deflection of the laser-treated, and non-treated sections was measured. The global mechanical system properties were simulated and corresponded with high accuracy to the measured results of deflection.