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Strain-induced dynamic control over the population of quantum emitters in two-dimensional materials
(2023)
The discovery of quantum emitters in two-dimensional materials has triggered a surge of research to assess their suitability for quantum photonics. While their microscopic origin is still the subject of intense studies, ordered arrays of quantum emitters are routinely fabricated using static strain-gradients, which are used to drive excitons toward localized regions of the 2D crystals where quantum-light-emission takes place. However, the possibility of using strain in a dynamic fashion to control the appearance of individual quantum emitters has never been explored so far. In this work, we tackle this challenge by introducing a novel hybrid semiconductor-piezoelectric device in which WSe2 monolayers are integrated onto piezoelectric pillars delivering both static and dynamic strains. Static strains are first used to induce the formation of quantum emitters, whose emission shows photon anti-bunching. Their excitonic population and emission energy are then reversibly controlled via the application of a voltage to the piezoelectric pillar. Numerical simulations combined with drift-diffusion equations show that these effects are due to a strain-induced modification of the confining-potential landscape, which in turn leads to a net redistribution of excitons among the different quantum emitters. Our work provides relevant insights into the role of strain in the formation of quantum emitters in 2D materials and suggests a method to switch them on and off on demand.
A quantum-light source that delivers photons with a high brightness and a high degree of entanglement is fundamental for the development of efficient entanglement-based quantum-key distribution systems. Among all possible candidates, epitaxial quantum dots are currently emerging as one of the brightest sources of highly entangled photons. However, the optimization of both brightness and entanglement currently requires different technologies that are difficult to combine in a scalable manner. In this work, we overcome this challenge by developing a novel device consisting of a quantum dot embedded in a circular Bragg resonator, in turn, integrated onto a micromachined piezoelectric actuator. The resonator engineers the light-matter interaction to empower extraction efficiencies up to 0.69(4). Simultaneously, the actuator manipulates strain fields that tune the quantum dot for the generation of entangled photons with fidelities up to 0.96(1). This hybrid technology has the potential to overcome the limitations of the key rates that plague current approaches to entanglement-based quantum key distribution and entanglement-based quantum networks. Introduction
Beyond the Four-Level Model: Dark and Hot States in Quantum Dots Degrade Photonic Entanglement
(2023)
Entangled photon pairs are essential for a multitude of quantum photonic applications. To date, the best performing solid-state quantum emitters of entangled photons are semiconductor quantum dots operated around liquid-helium temperatures. To favor the widespread deployment of these sources, it is important to explore and understand their behavior at temperatures accessible with compact Stirling coolers. Here we study the polarization entanglement among photon pairs from the biexciton–exciton cascade in GaAs quantum dots at temperatures up to ∼65 K. We observe entanglement degradation accompanied by changes in decay dynamics, which we ascribe to thermal population and depopulation of hot and dark states in addition to the four levels relevant for photon pair generation. Detailed calculations considering the presence and characteristics of the additional states and phonon-assisted transitions support the interpretation. We expect these results to guide the optimization of quantum dots as sources of highly entangled photons at elevated temperatures.