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Black titanium dioxide in situ generated on femtosecond laser induced periodic surface structures
(2018)
The properties of diamond make it an attractive material for MEMS and sensor devices. We present the feasibility to fabricate membranes and cantilevers made of nano-(micro-) crystalline diamond films grown on Si/SiO2 substrates using microwave chemical vapour deposition (MWCVD). The patterning of micromechanical structures was performed by a combined process of femtosecond laser ablation and wet etching. We designed cantilever structures with varying lengths and widths (25, 50, 100, 200 and 300 μm). The cantilevers were made in a symmetric left- and right-hand configuration. An additional laser treatment was used to modify the mechanical properties of the left-hand cantilever. The deflection of the laser-treated, and non-treated sections was measured. The global mechanical system properties were simulated and corresponded with high accuracy to the measured results of deflection.
Various carbon (nano-) forms, so-called allotropes, have become one of the most supporting activities in fundamental and applied research trends. Therefore, a universal deposition process capable of “adjusting” system parameters in one “deposition chamber” is highly demanding. Here, we present a low-pressure large area deposition system combining radiofrequency (RF) and microwave (MW) plasma in one chamber in different configurations, which offers a wide deposition window for the growth of sp2 carbon (carbon nanotubes, amorphous carbon), a mixture of sp2 and sp3 (diamond-like films) and pure sp3 carbon represented by diamond films. We will show that not only the type of plasma source (RF vs. MW) but also the gas mixture and plasma chemistry are crucial parameters for the controllable and reproducible growth of these allotropes at temperatures from 250 to 800 °C.
Deep etched structures in GaAs with high aspect ratio have promising applications in optoelectronics and MEMS devices. The key factors in their fabrication process are the choosing of proper mask material and etching conditions which results in high selectivity and an anisotropic etch profile with smooth sidewalls. In this work, we studied several types of mask materials (Al, Ni, Cr, SiO2) for deep reactive ion etching of GaAs using inductively coupled plasma system. Thus, several sets of experiments were performed with varying gas mixture, pressure and ICP/RF power. As a result, we find optimized conditions and minimal thickness of mask material for achieving deep etched (>140 m) GaAs structures.
The properties of SiC and diamond make them attractive materials for MEMS and sensor devices. We innovated specific laser ablation techniques to fabricate membranes and cantilevers made of SiC or nano-(micro-) crystalline diamond films grown on Si/SiO2 substrates by microwave chemical vapour deposition (MWCVD). We started research to generate surface moulds to grow corrugated diamond films for membranes and cantilevers. A software tool was developed to support the design of micromechanical cantilevers. We can measure deformation and resonant frequency of diamond cantilevers and identify the global mechanical properties. A benchmark against finite element simulations enables an inverse identification of the specific system parameters and simplifies the characterization procedure.