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This study presents different approaches to increase the sensing area of NiO based semiconducting metal oxide gas sensors. Micro- and nanopatterned laser induced periodic surface structures (LIPSS) are generated on silicon and Si/SiO2 substrates. The surface morphologies of the fabricated samples are examined by FE SEM. We select the silicon samples with an intermediate Si3N4 layer due to its superior isolation quality over the thermal oxide for evaluating the hydrogen and acetone sensitivity of a NiO based test sensor.
Deep etched structures in GaAs with high aspect ratio have promising applications in optoelectronics and MEMS devices. The key factors in their fabrication process are the choosing of proper mask material and etching conditions which results in high selectivity and an anisotropic etch profile with smooth sidewalls. In this work, we studied several types of mask materials (Al, Ni, Cr, SiO2) for deep reactive ion etching of GaAs using inductively coupled plasma system. Thus, several sets of experiments were performed with varying gas mixture, pressure and ICP/RF power. As a result, we find optimized conditions and minimal thickness of mask material for achieving deep etched (>140 m) GaAs structures.