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Deep etched structures in GaAs with high aspect ratio have promising applications in optoelectronics and MEMS devices. The key factors in their fabrication process are the choosing of proper mask material and etching conditions which results in high selectivity and an anisotropic etch profile with smooth sidewalls. In this work, we studied several types of mask materials (Al, Ni, Cr, SiO2) for deep reactive ion etching of GaAs using inductively coupled plasma system. Thus, several sets of experiments were performed with varying gas mixture, pressure and ICP/RF power. As a result, we find optimized conditions and minimal thickness of mask material for achieving deep etched (>140 m) GaAs structures.
Various carbon (nano-) forms, so-called allotropes, have become one of the most supporting activities in fundamental and applied research trends. Therefore, a universal deposition process capable of “adjusting” system parameters in one “deposition chamber” is highly demanding. Here, we present a low-pressure large area deposition system combining radiofrequency (RF) and microwave (MW) plasma in one chamber in different configurations, which offers a wide deposition window for the growth of sp2 carbon (carbon nanotubes, amorphous carbon), a mixture of sp2 and sp3 (diamond-like films) and pure sp3 carbon represented by diamond films. We will show that not only the type of plasma source (RF vs. MW) but also the gas mixture and plasma chemistry are crucial parameters for the controllable and reproducible growth of these allotropes at temperatures from 250 to 800 °C.