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Entangled photon generation at 1550 nm in the telecom C-band is of critical importance as it enables the realization of quantum communication protocols over long distance using deployed telecommunication infrastructure. InAs epitaxial quantum dots have recently enabled on-demand generation of entangled photons in this wavelength range. However, time-dependent state evolution, caused by the fine-structure splitting, currently limits the fidelity to a specific entangled state. Here, we show fine-structure suppression for InAs quantum dots using micromachined piezoelectric actuators and demonstrate generation of highly entangled photons at 1550 nm. At the lowest fine-structure setting, we obtain a maximum fidelity of 90.0 ± 2.7% (concurrence of 87.5 ± 3.1%). The concurrence remains high also for moderate (weak) temporal filtering, with values close to 80% (50%), corresponding to 30% (80%) of collected photons, respectively. The presented fine-structure control opens the way for exploiting entangled photons from quantum dots in fiber-based quantum communication protocols.
In recent years, ultrashort pulsed lasers have increased their applicability for industrial requirements, as reliable femtosecond and picosecond laser sources with high output power are available on the market. Compared to conventional laser sources, high quality processing of a large number of material classes with different mechanical and optical properties is possible. In the field of laser cutting, these properties enable the cutting of multilayer substrates with changing material properties. In this work, the femtosecond laser cutting of phosphor sheets is demonstrated. The substrate contains a 230 micrometer thick silicone layer filled with phosphor, which is embedded between two glass plates. Due to the softness and thermal sensitivity of the silicone layer in combination with the hard and brittle dielectric material, the separation of such a material combination is challenging for both mechanical separation processes and cutting with conventional laser sources. In our work, we show that the femtosecond laser is suitable to cut the substrate with a high cutting edge quality. In addition to the experimental results of the laser dicing process, we present a universal model that allows predicting the final cutting edge geometry of a multilayer substrate.
We have demonstrated micromachining of bulk 3C silicon carbide (3C- SiC) wafers by employing 1028nm wavelength femtosecond laser pulses of energy less than 10 nJ directly from a femtosecond laser oscillator, thus eliminating the need for an amplified system and increasing the micromachining speed by more than four orders of magnitude.