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In this work, we investigated the influence of different etch depths of the rib waveguides on the performance of SiN-based AWGs. For this purpose, an 8-channel 100 GHz AWG was designed for a center wavelength of 850 nm. The design parameters entered were calculated using the AWG-Parameters tool. The simulations were performed with a commercial photonic tool PHASAR from Optiwave. The simulated performance was evaluated using the AWG-Analyzer tool. For the AWG design, we used three identical rib waveguides with different etch depths to simulate possible etch imperfection. The simulations show the wavelength shift and degradation of the AWG performance.