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Optical splitters are passive optical components, which have found applications in a wide range of telecom, sensing, medical and many other scientific areas.
Low-index contrast optical splitters (Silica-on-Silicon (SoS) based waveguide devices) feature many advantages such as low fiber coupling losses and low propagation losses. They are considered an attractive DWDM solution in the telecommunication for all optical signal processing in optical communication systems. Nowadays the steadily increasing data volume in communication networks is driven by a rapid proliferation of home-based and business computers, storage capacities, processing capabilities and the extensive availability of Internet. The challenge is to transfer high data volumes in short periods of time over high distances as lossless as possible. The task of the optical splitters in Fiber-to-the-x (FTTx) network is to split one optical signal in many identical signals bringing for example the same TV signal in different households. Of course, the more buildings can be served by one optical splitter the lower are the installation costs.
High-index contrast optical splitters (such as silicon, silicon nitride or polymer based waveguide devices) feature much smaller waveguide size compared to low index contrast splitters. Such compact devices can easily be implemented on-chip and have already been used in the development of optical sensors, devices for DNA diagnostics and for infrared spectroscopy.
We will present the latest achievements in the design of two mostly used optical splitters (MMI and Y-branch) and discuss their advantages and disadvantages. Finally, some applications of the splitters developed in the frame of various projects will be presented.
This work was carried out in the framework of the project PHOCOP (no. SK-AT-2017-0013) and NAMOPRISIN (no. SK-AT-2017-0005) from the Slovak research and development agency of the Ministry of Education, Science, Research and Sport of the Slovak Republic and SK 16/2018 and 15/2018 from OeAD-GmbH.
Abstract: ams AG is a leading provider of sensing solutions developing semiconductor sensors in a wide variety of fields, with optical sensing as one of the key competences. Since integrated photonics is a promising technology for new sensor systems, ams AG has been developing processes for fully integrated CMOS-compatible photonic components based on Si3N4. This talk will provide an overview on the processing of basic photonic building blocks and their optical properties and performance. We will also give examples for applications in the fields of optical coherence tomography and opto-chemical gas sensing. In the 1980s photonics started its way for common use in telecommunication technology, using optical fiber technologies. In recent years, also a variety of photonic sensors has been proposed and developed. One of the major drawbacks of most of these photonic devices has been the lack of integration into existing (semiconductor) production processes, so far. This integration is feasible using SiN material systems to process monolithically integrated CMOS-compatible photonic sensors in the visible and near-infrared spectrum. We will present the basic processing steps for the SiN photonic technology, the development of some critical processing steps such as SiN deposition and SiN etching as well as several photonic components (waveguides, splitters, etc.) with their optical properties. One of the applications presented relates to optical coherence tomography (OCT), a fast growing imaging technique in ophthalmology. Drawbacks of existing OCT systems are their high costs as well as their bulkiness, which prevents a wider spread use of OCT systems.
One way to overcome both cost and size issues is to integrate optical and electrical components on a single chip.
Part of this work was carried out in the framework of the projects COHESION (funded by the Austrian Research Promotion Agency (FFG), no. 848588), OCTCHIP (funded by the EU’ Horizon 2020 research and innovation programme, no. 688173), and COLODOR (M-ERA.NET transnational Call 2015, funded by the Austrian Research Promotion Agency (FFG), no.854066, and the Bundesministerium für Bildung und Forschung, Germany).
Introducing 3D sub-micrometer technologies based on polymers opened new possibilities of design and fabrication of photonic devices and components in 3D arrangement. 3D laser lithography is direct writing process based on two photon polymerization exhibiting high accuracy and versatility, where numerous resists and even polymer ceramic mixtures can be used. We present design and simulation of polymer based photonic components with a focus on arrayed waveguide gratings (AWG) based on optical multiplexers/demultiplexers and optical splitters. All optical components were designed for 1550 nm operating wavelength, applying two commercial photonics tools. This study creates a basis for the design of optical components in 3D arrangement, which will be fabricated by 3D laser lithography.
Comparison of silicon nitride based 1x8 Y-branch splitters applying different waveguide structures
(2019)
This paper presents design, simulation and optimization of 1x8 Y-branch power splitters based on Si/SiO2/SiN/SiOx material platform. For the designs, two different waveguide structures were used, i.e. ridge and rib waveguides. The splitters were designed for 850 nm spectral optical window and the simulations were performed applying FEM and BPM methods in RSoft photonic tool. The aim of this work was to find minimum physical dimensions of the designed splitters occupying minimal space on PIC chip. The optimization was done with regards to high symmetrical splitting ratio and low insertion loss. Finally, the optical properties of both splitters were studied and compared with each other.
SiN is a suitable material for fabricating of photonic integrated circuits with middle refractive index contrast for the visible and near infrared spectral region with ultra-low propagation losses. The paper deals with the design and simulation of fiber to SiN chip butt coupler with single step fabrication process without thickness tapering. Coupler is designed for 850 nm band for coupling between strip 0.25 μm × 1.00 μm waveguide and Nufern's 780-OCT single mode optical fiber with core diameter 4.4 μm. The coupling losses simulation results of the two simulation methods finite-difference beam propagation techniques and eigenmode expansion method are compared.
We present design and simulation of 16-channel, 100-GHz silicon nitride based AWG using BeamPROP simulation engine of RSoft photonic tool. The AWG was designed for TM-polarized light with central wavelength of 850 nm. The input design parameters were calculated applying AWG-Parameters tool. For this purpose, we created a ridge waveguide structure, used in the design of the AWG layout, and performed FEM simulation. The output of the BPM simulation of AWG structure are the transmission characteristics, which was used to calculate transmission parameters defining optical properties of simulated AWG. The achieved simulation results are in a good agreement with the design.
Comparison of silicon nitride based 8-channel 100-GHz AWGs applying different waveguide structures
(2019)
This paper presents design and simulation of 8-channel, 100-GHz AWGs based on Si/SiO2/SiN/SiOx material platform. For the designs, two different waveguide structures were used, i.e. ridge and rib waveguides. AWGs were designed for central wavelength of 850 nm applying AWG-Parameters tool. The simulations were performed applying FEM and BPM methods in RSoft and PHASAR photonic tools. The simulation results show considerably lower losses but slightly higher channel crosstalk when applying rib waveguides.
The photonic integrated circuits are required in the next generations of coherent terabit optical communications. The software tools for automated adjustment and coupling of optical fiber arrays to photonic integrated circuits has been developed. The obtained results are needed in final production phase in the technology process of photonic integrated circuits packaging.
Compact and high-resolution 256-channel silicon nitride based AWG-spectrometer for OCT on a chip
(2019)
We present design, simulation and technological verification of a compact 256-channel, 42-GHz silicon nitride based AWG-spectrometer. The spectrometer was designed for TM-polarized light with a central wavelength of 850 nm, applying “AWG-Parameters” tool. This design is based on a previous study of various AWG designs (8-channel, 100-GHz; 20-channel, 50-GHz; 40-channel, 50-GHz, 80-channel, 50-GHz and 160-channel, 50-GHz AWGs), which were all technologically verified. The spectrometer features small size and high resolution. It is integrated on OCT chip using standard CMOS processes. The SD-OCT system is developed to operate in a wavelength range from 800 nm to 900 nm, having 0.1 nm resolution.
