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Material optimization of the alignment marks for the EBDW lithography
Author: | Ladislav Matay, Robert Andok, V. Barák, A. Ritomský, I. Konečnikova, Ivan Kostič, Stefan Partel, Peter Hudek |
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DOI: | https://doi.org/10.1109/ASDAM.2010.5666341 |
Parent Title (English): | 8th International Conference on Advanced Semiconductor Devices Microsystems (ASDAM), 2010. 25 - 27 Oct. 2010, Smolenice Castle, Slovakia |
Publisher: | IEEE Operations Center |
Place of publication: | Piscataway, NJ |
Editor: | Juraj Breza |
Document Type: | Conference Proceeding |
Language: | English |
Year of publication: | 2010 |
Release Date: | 2018/11/22 |
Tag: | EBDW lithography; Gold; Lithography; Nickel; Resists; Silicon; Surfaces; alignment marks; deep reactive ion etching; e-beam lithography; electron beam lithography; electron-beam direct-write; material optimization; optimisation; photolithography; sputter etching |
First Page: | 85 |
Last Page: | 88 |
Organisationseinheit: | Forschung / Forschungszentrum Mikrotechnik |
Publicationlist: | Partel, Stefan |