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Using of laser ablation technique in the processing technology of GaN/SiC based MEMS for extreme conditions

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Metadaten
Author:Johann Zehetner, Gabriel Vanko, Pavlina Choleva, Jaroslav Dzuba, Ivan Ryger, Tibor Lalinsky
Parent Title (English):ASDAM 2014. Conference proceedings. The tenth International Conference on Advanced Semiconductor Devices and Microsystems. Smolenice Castle, Slovakia. 20-22 October 2014
Publisher:IEEE
Place of publication:Piscataway, NJ
Editor:Juraj Breza, Daniel Donoval, Erik Vavrinsky
Document Type:Conference Proceeding
Language:English
Year of publication:2014
Release Date:2018/11/22
Tag:AlGaN-GaN; Aluminum gallium nitride; GaN-SiC; Gallium nitride; HEMT; III-V semiconductors; Laser ablation; MEMS sensors; Micromechanical devices; Schottky diodes; Sensors; SiC substrates; Silicon carbide; Substrates; aluminium compounds; backside damaging; epitaxial heterostructures; femtosecond laser ablation technique; gallium compounds; high electron mobility transistors; microelectromechanical systems; micromechanic structures fabrication; microsensors; silicon compounds; wide band gap semiconductors
Number og pages:4
Organisationseinheit:Forschung / Forschungszentrum Mikrotechnik
Publicationlist:Zehetner, Johann