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- GaAs (1)
- ICP (1)
- Measurement by laser beam (1)
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Deep etched structures in GaAs with high aspect ratio have promising applications in optoelectronics and MEMS devices. The key factors in their fabrication process are the choosing of proper mask material and etching conditions which results in high selectivity and an anisotropic etch profile with smooth sidewalls. In this work, we studied several types of mask materials (Al, Ni, Cr, SiO2) for deep reactive ion etching of GaAs using inductively coupled plasma system. Thus, several sets of experiments were performed with varying gas mixture, pressure and ICP/RF power. As a result, we find optimized conditions and minimal thickness of mask material for achieving deep etched (>140 m) GaAs structures.
The properties of diamond make it an attractive material for MEMS and sensor devices. We present the feasibility to fabricate membranes and cantilevers made of nano-(micro-) crystalline diamond films grown on Si/SiO2 substrates using microwave chemical vapour deposition (MWCVD). The patterning of micromechanical structures was performed by a combined process of femtosecond laser ablation and wet etching. We designed cantilever structures with varying lengths and widths (25, 50, 100, 200 and 300 μm). The cantilevers were made in a symmetric left- and right-hand configuration. An additional laser treatment was used to modify the mechanical properties of the left-hand cantilever. The deflection of the laser-treated, and non-treated sections was measured. The global mechanical system properties were simulated and corresponded with high accuracy to the measured results of deflection.