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Deep etched structures in GaAs with high aspect ratio have promising applications in optoelectronics and MEMS devices. The key factors in their fabrication process are the choosing of proper mask material and etching conditions which results in high selectivity and an anisotropic etch profile with smooth sidewalls. In this work, we studied several types of mask materials (Al, Ni, Cr, SiO2) for deep reactive ion etching of GaAs using inductively coupled plasma system. Thus, several sets of experiments were performed with varying gas mixture, pressure and ICP/RF power. As a result, we find optimized conditions and minimal thickness of mask material for achieving deep etched (>140 m) GaAs structures.
The properties of SiC and diamond make them attractive materials for MEMS and sensor devices. We innovated specific laser ablation techniques to fabricate membranes and cantilevers made of SiC or nano-(micro-) crystalline diamond films grown on Si/SiO2 substrates by microwave chemical vapour deposition (MWCVD). We started research to generate surface moulds to grow corrugated diamond films for membranes and cantilevers. A software tool was developed to support the design of micromechanical cantilevers. We can measure deformation and resonant frequency of diamond cantilevers and identify the global mechanical properties. A benchmark against finite element simulations enables an inverse identification of the specific system parameters and simplifies the characterization procedure.